Dual-active-layer InGaZnO high-voltage thin-film transistors
Wenxing Huo, Huili Liang, Yicheng Lu, Zuyin Han, Rui Zhu, Yanxin Sui, Tao Wang, Zengxia Mei
Abstract
Abstract InGaZnO high-voltage thin-film transistors (HV-TFTs) with vertical dual-active-layer structure and lateral offset design were fabricated at low temperature. The TFT features such as sub-threshold swing, threshold voltage, and hysteresis voltage are similar to those of the normal devices; furthermore, they are independent of the offset length. The blocking voltage of HV-TFTs with an offset of 10 μm is 406 ± 17 V while the ON/OFF ratio reaches 10 9 at <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:msub> <mml:mi>V</mml:mi> <mml:mrow> <mml:mrow> <mml:mtext>DS</mml:mtext> </mml:mrow> </mml:mrow> </mml:msub> </mml:mrow> <mml:mo>=</mml:mo> <mml:mn>10</mml:mn> <mml:mrow> <mml:mtext> V</mml:mtext> </mml:mrow> </mml:math> .