Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes
Weizhen Yao, Lianshan Wang, Yulin Meng, Shaoyan Yang, Xianglin Liu, Huidan Niu, Zhanguo Wang
Abstract
Red LEDs with a small blue shift are fabricated by using a stress engineering strategy through the growth of the pre-stained InGaN layer and dual-wavelength QWs on a cone-shape patterned sapphire substrate.
Topics & Concepts
Light-emitting diodeMaterials scienceOptoelectronicsBlueshiftDiodeLayer (electronics)Substrate (aquarium)SapphireRed shiftBlue lightStress (linguistics)Red lightWavelengthCurrent (fluid)OpticsNanotechnologyElectrical engineeringPhotoluminescenceLaserLinguisticsPhilosophyEngineeringGalaxyQuantum mechanicsBiologyGeologyOceanographyPhysicsBotanyGaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materials