Effect of Ni-doped on switching mechanisms and characteristics of ZnO-based memristor: Experimental and first-principles investigations
Hao Wang, Xiaoyi Lei, Zhuqing Liu, Shulong Wang, Yang Dai, Yunyao Zhang, Chenguang Liao, Junfeng Yan, Wu Zhao
Topics & Concepts
Materials scienceDopingResistive random-access memoryFermi levelVacancy defectOptoelectronicsCondensed matter physicsConductivityDensity of statesNanotechnologyVoltageElectronElectrical engineeringChemistryPhysical chemistryQuantum mechanicsPhysicsEngineeringAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsZnO doping and properties