Temperature dependence of electrical and optical characteristics of InAsP laser diode
Ivan B. Karomi, Yasir Yahya Kassim, Hisham A. Salih, Mohammed S. Al-Ghamdi
Abstract
Abstract In this article, we report experimental investigations on the current-voltage (I-V) and the current-power (I-P) characteristics of 3mm cavity length InAsP/GaAs QD laser diode emitting at 773nm over a wide temperature range of 150-400 K. The results of the (I-V-T) measurements showed a decrease in the turn-on-voltage of the sample by (-3.52 mV/K) as well as a decrease in the dynamic resistance by (-4.9 mΩ/K). Conversely, the (I-P-T) measurements strongly exhibited the temperature dependence of the threshold current density above 300 K, whilst the characteristic temperature (T 0 ) of the laser diode was calculated to be between 250 - 370 K as (T o = 70.4 K). Moreover, the external deferential quantum efficiency ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:msubsup> <mml:mi>η</mml:mi> <mml:mi>d</mml:mi> <mml:mrow> <mml:mi>e</mml:mi> <mml:mi>x</mml:mi> <mml:mi>t</mml:mi> </mml:mrow> </mml:msubsup> </mml:mrow> </mml:math> ) decreases by (- 0.14%/K) from 190 to 300 K. The increases in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:msubsup> <mml:mi>η</mml:mi> <mml:mi>d</mml:mi> <mml:mrow> <mml:mi>e</mml:mi> <mml:mi>x</mml:mi> <mml:mi>t</mml:mi> </mml:mrow> </mml:msubsup> </mml:mrow> </mml:math> of above 300 K, was observed. This opens the door for further investigations in this material such as carrier distribution and gain measurements.