Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001)
You-Ron Lin, Susanne Wolff, Philip Schädlich, Mark Hutter, Serguei Soubatch, Tien‐Lin Lee, F. Stefan Tautz, Thomas Seyller, Christian Kumpf, François C. Bocquet
Abstract
Using the normal incidence x-ray standing-wave technique as well as low-energy electron microscopy we have investigated the structure of quasifreestanding monolayer graphene (QFMLG) obtained by intercalation of antimony under the $(6\sqrt{3}\ifmmode\times\else\texttimes\fi{}6\sqrt{3})R{30}^{\ensuremath{\circ}}$ reconstructed graphitized $6H$-SiC(0001) surface, also known as zeroth-layer graphene. We found that Sb intercalation decouples the QFMLG well from the substrate. The distance from the QFMLG to the Sb layer almost equals the expected van der Waals bonding distance of C and Sb. The Sb intercalation layer itself is monoatomic, flat, and located much closer to the substrate, at almost the distance of a covalent Sb-Si bond length. All data is consistent with Sb located on top of the uppermost Si atoms of the SiC bulk.