Tunable electronic and optical properties of a BAs/As heterostructure by vertical strain and external electric field

Abstract

the strain and experiencing an indirect-to-direct band gap transition. Moreover, the band gap of the heterostructure varies almost linearly with external electric field, and the semiconductor-to-metal transition can be realized in the presence of a strong electric field. The calculated band alignment and optical absorption reveal that the BAs/As heterostructure could present an excellent light-harvesting performance. The absorption strength can be tuned mainly by interlayer coupling, while external electric field shows clear regulating effects on the absorption strength and absorption edge.

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