Solution-Processed p-Type CuI Thin-Film Transistors With NAND Logic Function
Xing Yuan, Wei Dou, Yifan Wang, Jing Zeng, Liushun Wang, Liuhui Lei, Dongsheng Tang
Abstract
In this article, copper iodide (CuI) is used as the channel layer in thin-film transistors (TFTs) for the first time to realize the NAND logic function. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vphantom {_{\int }}$ </tex-math></inline-formula> TFTs are optimized by 80 °C annealing and have an ON/ OFF current ratio of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.7\times10$ </tex-math></inline-formula> 2 and a field-effect mobility of 0.18 cm2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot \text{V}$ </tex-math></inline-formula> −1 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot \text{s}$ </tex-math></inline-formula> −1, demonstrating good stability and reproducibility. Furthermore, by using chitosan with electric-double-layer (EDL) effect as the gate dielectric instead of standard silica, the operating voltage can be decreased to 2.0 V. The p-type CuI TFTs have the potential to be used in complementary electronic circuits with low energy consumption as well as portable sensors.