Monolithic Integration of GaN-Based Enhancement/Depletion-Mode MIS-HEMTs With AlN/SiN Bilayer Dielectric
Bin Zhang, Jinyan Wang, Chen Wang, Xin Wang, Chengyu Huang, Jiayin He, Maojun Wang, Jianghui Mo, Yansheng Hu, Wengang Wu
Abstract
In this letter, we demonstrate a GaN-based E/D-mode (Enhancement/Depletion-mode) inverter with PEALD-AlN (Plasma Enhanced Atomic Layer Deposition) and LPCVD-SiN (Low Pressure Chemical Vapor Deposition) as bilayer gate dielectric, where the E-mode GaN-MISHEMT is fabricated based on our proposed self-terminating gate recess etching technique. The combination of the two dielectrics makes the device exhibits high gate swing and low dielectric/III-V interface state densities. So that the fabricated inverter shows a large logic swing, high temperature stability and low hysteresis effect.
Topics & Concepts
Materials scienceOptoelectronicsDielectricAtomic layer depositionChemical vapor depositionEtching (microfabrication)HysteresisGate dielectricBilayerInverterLogic gateWide-bandgap semiconductorHigh-κ dielectricLayer (electronics)Electronic engineeringNanotechnologyElectrical engineeringVoltageTransistorChemistryCondensed matter physicsMembraneBiochemistryPhysicsEngineeringGaN-based semiconductor devices and materialsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design