Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise
M. N. Koryazhkina, Д. О. Филатов, V.A. Shishmakova, М. Е. Шенина, A. I. Belov, И. Н. Антонов, В. Е. Котомина, Alexey Mikhaylov, О. Н. Горшков, N. V. Agudov, Claudio Guarcello, Angelo Carollo, Bernardo Spagnolo
Topics & Concepts
Resistive touchscreenNoise (video)Relaxation (psychology)State (computer science)Materials scienceOptoelectronicsNanotechnologyCondensed matter physicsComputer scienceElectrical engineeringPhysicsEngineeringNeuroscienceArtificial intelligencePsychologyAlgorithmImage (mathematics)Advanced Memory and Neural ComputingNeural dynamics and brain functionstochastic dynamics and bifurcation