Dipole-induced transitions from Schottky to Ohmic contact at Janus MoSiGeN<sub>4</sub>/metal interfaces
Wen Ai, Xiaohui Hu, Tao Xu, Jian Yang, Litao Sun
Abstract
We revealed that n-type/p-type Schottky and n-type Ohmic contacts can be realized at metal/MoSiGeN 4 interfaces and used machine learning to describe the Schottky barrier, enabling the design of high-performance Janus MoSiGeN 4 electronic devices.
Topics & Concepts
JanusOhmic contactMaterials scienceDipoleSchottky barrierMetalOptoelectronicsTransition metalCondensed matter physicsNanotechnologyMetal–semiconductor junctionSchottky diodeEngineering physicsChemistryMetallurgyPhysicsLayer (electronics)Organic chemistryCatalysisBiochemistryDiode2D Materials and ApplicationsAdvanced Memory and Neural ComputingGas Sensing Nanomaterials and Sensors