A 200-V Half-Bridge Monolithic GaN Power IC With High-Speed Level Shifter and dV<sub>S</sub>/dt Noise Immunity Enhancement Structure
Yifei Zheng, Boyu Li, Qianheng Dong, Yutao Ying, Deyuan Song, Jing Zhu, Weifeng Sun, Qinsong Qian, Long Zhang, Sheng Li, Denggui Wang, Jianjun Zhou
Abstract
Benefiting from the gallium nitride (GaN) monolithic process, a half-bridge power IC can fully unlock the high-speed capabilities of GaN devices by integrating drive circuits and power switches on the same die. However, the high operating frequency of the GaN system puts forward higher requirements on the delay and reliability of the level shifter, which serves as the key component for the half-bridge power IC. This work develops a 200-V half-bridge monolithic GaN power IC, adopting an efficient and concise level-shifting solution to mitigate the adversely affecting on speed caused by the absence of p-type devices in GaN processes. In addition, this design includes a noise immunity enhancement structure, which eliminates <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {d}V_{S}/\text {d}t$ </tex-math></inline-formula> noise without compromising response time. The proposed GaN power IC has been implemented on a 1- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> GaN-on-silicon process, and experimental results have already been performed to verify its outstanding characteristics.