Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low I<sub>OFF</sub>, High Endurance and Low V<sub>th</sub> Drift 3D Crosspoint Memory
Huai‐Yu Cheng, Wei-Chih Chien, I. T. Kuo, Chih-Hsiang Yang, Y. C. Chou, Robert L. Bruce, Erh-Kun Lai, D. Daudelin, C. W. Yeh, L. Gignac, Chuanwei Cheng, A. Grun, C. Lavoie, Nanbo Gong, L. Buzi, H. Y. Ho, A. Ray, H. Utomo, M. BrightSky, H.L. Lung
Abstract
The doping effect on AsSeGe OTS materials is comprehensively studied. While B, C, S doped selectors suffer a stringent trade-off among V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> , I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> and cycling endurance, Si and In doped selectors demonstrate an extremely low V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tS</inf> (system threshold voltage when PCM is in SET state) and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tR</inf> (system threshold voltage when PCM is in RESET state) drift characteristics. We demonstrated true crosspoint operation (by half-V scheme) in a 1k by 1k cross-point ADM memory arrays from an In doped AsSeGe selector integrated with PCM with extremely low I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> (~3nA from a total 100 crosspoint cells), wide V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tS</inf> /V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tR</inf> memory window (~2V main distribution memory window), 1E6 write cycles and low V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ts</inf> and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tR</inf> drift characteristic (project<0.3V and 0.5V, respectively for one year) which is suggested for 3D crosspoint memory technology.