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Entropy regulation in LaNbO<sub>4</sub>-based fergusonite to implement high-temperature phase transition and promising dielectric properties

Deqin Chen, Na Yan, Xuefeng Cao, Fengrong Li, Laijun Liu, Qinghua Shen, Huanfu Zhou, Chunchun Li

2023Journal of Advanced Ceramics64 citationsDOIOpen Access PDF

Abstract

High-entropy effect is a novel design strategy to optimize properties and explore novel materials. In this work, (La<sub>1/5</sub>Nd<sub>1/5</sub>Sm<sub>1/5</sub>Ho<sub>1/5</sub>Y<sub>1/5</sub>)NbO<sub>4</sub> (5RNO) high-entropy microwave dielectric ceramics were successfully prepared in the sintering temperature (S.T.) range of 1210–1290 ℃ via a solid-phase reaction route, and medium-entropy (La<sub>1/3</sub>Nd<sub>1/3</sub>Sm<sub>1/3</sub>)NbO<sub>4</sub> and (La<sub>1/4</sub>Nd<sub>1/4</sub>Sm<sub>1/4</sub>Ho<sub>1/4</sub>)NbO<sub>4</sub> (3RNO and 4RNO) ceramics were compared. The effects of the entropy (<i>S</i>) on crystal structure, phase transition, and dielectric performance were evaluated. The entropy increase yields a significant increase in a phase transition temperature (from monoclinic fergusonite to tetragonal scheelite structure). Optimal microwave dielectric properties were achieved in the high-entropy ceramics (5RNO) at the sintering temperature of 1270 ℃ for 4 h with a relative density of 98.2% and microwave dielectric properties of dielectric permittirity (<i>ε</i><sub>r</sub>) = 19.48, quality factor (<i>Q</i>×<i>f</i>) = 47,770 GHz, and resonant frequency temperature coefficient (<i>τ</i><sub>f</sub>) = –13.50 ppm/℃. This work opens an avenue for the exploration of novel microwave dielectric material and property optimization via entropy engineering.

Topics & Concepts

DielectricMaterials scienceTetragonal crystal systemTemperature coefficientPhase transitionCeramicAnalytical Chemistry (journal)Crystal structureCondensed matter physicsMineralogyCrystallographyPhysicsChemistryOptoelectronicsComposite materialChromatographyMicrowave Dielectric Ceramics SynthesisFerroelectric and Piezoelectric MaterialsSemiconductor materials and devices
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