Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source
Enrique G. Marín, Damiano Marian, Marta Perucchini, Gianluca Fiori, Giuseppe Iannaccone
Abstract
and multiscale materials and device modeling and incite the exploration of the 2D-material design space in order to find more abrupt DOS transitions and better suitable candidates.
Topics & Concepts
HeterojunctionMaterials scienceStackingOptoelectronicsTransistorField-effect transistorBand gapAb initioCondensed matter physicsVoltagePhysicsNuclear magnetic resonanceQuantum mechanics2D Materials and ApplicationsFerroelectric and Negative Capacitance DevicesNanowire Synthesis and Applications