Unraveling the performance enhancement mechanism of Ti doping for Li<sub>4</sub>SiO<sub>4</sub>-based solar energy storage: a combined experimental, kinetic, and DFT study
Jianchen Yi, Ziyi Ye, Wei Yuan, Ruicheng Fu, He Hongping, Xiya Liu, Yingchao Hu
Abstract
The reason for the performance enhancement of the heat carrier is that the lattice defects caused by Ti doping increase the ion migration rate.
Topics & Concepts
Kinetic energyDopingMaterials scienceMechanism (biology)Performance enhancementSolar energyChemical engineeringNanotechnologyOptoelectronicsPhysicsElectrical engineeringEngineeringQuantum mechanicsPhysical medicine and rehabilitationMedicineSolar Thermal and Photovoltaic SystemsPhase Change Materials ResearchAdsorption and Cooling Systems