High-Fidelity CNOT Gate for Donor Electron Spin Qubits in Silicon
Ludwik Kranz, Stephen Roche, S. K. Gorman, J. G. Keizer, M. Y. Simmons
Abstract
Epitaxial atom-based spin qubits in silicon exhibit excellent properties, and benefit from the outstanding scalability of that material platform. As silicon spin-based qubits now start to meet the 99% fault-tolerance threshold, the authors show how the nuclear spins inherent to the local magnetic environment can be engineered as atomic magnets to boost the fidelities of two-qubit logic gates. Modeling indicates that two-qubit CNOT gate fidelities as high as 99.98% are realistic, through silicon purification and careful engineering. This work provides a roadmap for atom qubits in silicon, showing how to optimize two-qubit gates at both the design and measurement stages.
Topics & Concepts
QubitControlled NOT gateSpinsSiliconPhysicsQuantum computerQuantum entanglementSpin (aerodynamics)Quantum gateQuantum mechanicsNanotechnologyOptoelectronicsMaterials scienceCondensed matter physicsQuantumThermodynamicsQuantum and electron transport phenomenaAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices