Homoepitaxial <b>β</b>-Ga2O3 transparent conducting oxide with conductivity <b>σ</b> = 2323 S cm−1
Hyung Min Jeon, Kevin Leedy, D. C. Look, Celesta S. Chang, David A. Muller, Ştefan C. Bǎdescu, Vladimir Vasilyev, Jeff L. Brown, Andrew J. Green, Kelson D. Chabak
Abstract
Conductive homoepitaxial Si-doped β-Ga2O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm−1 conductivity (resistivity = 4.3 × 10−4 Ω-cm, carrier concentration = 2.24 × 1020 cm−3, mobility = 64.5 cm2 V−1 s−1, and electrical activation efficiency = 77%). High quality homoepitaxial films deposited on commercial (010) Fe-compensated β-Ga2O substrates were determined by high-resolution transmission electron microscopy and x-ray diffraction. The β-Ga2O3 films have ∼70% transparency from 3.7 eV (335 nm) to 0.56 eV (2214 nm). The combination of high conductivity and transparency offers promise for numerous ultrawide bandgap electronics and optoelectronic applications.