Spin splitting and strain in epitaxial monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> on graphene
H. Nakamura, A. Mohammed, Ph. Rosenzweig, K. Matsuda, Krystian Nowakowski, Kathrin Küster, P. Wochner, Shyjumon Ibrahimkutty, Ulrich Wedig, Hadeel Hussain, Jonathan Rawle, Chris Nicklin, Benjamin Stuhlhofer, G. Cristiani, Г. Логвенов, H. Takagi, Ulrich Starke
Abstract
We present the electronic and structural properties of monolayer ${\mathrm{WSe}}_{2}$ grown by pulsed-laser deposition on monolayer graphene (MLG) on SiC. The spin splitting in the ${\mathrm{WSe}}_{2}$ valence band at $\overline{\mathrm{K}}$ was ${\mathrm{\ensuremath{\Delta}}}_{\mathrm{SO}}=0.469\ifmmode\pm\else\textpm\fi{}0.008$ eV, as determined by angle-resolved photoemission spectroscopy. Synchrotron-based grazing-incidence in-plane x-ray diffraction (XRD) revealed the in-plane lattice constant of monolayer ${\mathrm{WSe}}_{2}$ to be ${a}_{{\mathrm{WSe}}_{2}}=3.2757\ifmmode\pm\else\textpm\fi{}0.0008$ \AA{}. This indicates a lattice compression of $\ensuremath{-}0.19$% relative to bulk ${\mathrm{WSe}}_{2}$. By using the experimentally determined graphene lattice constant (${a}_{\mathrm{MLG}}=2.4575\ifmmode\pm\else\textpm\fi{}0.0007$ \AA{}), we found that a $3\ifmmode\times\else\texttimes\fi{}3$ unit cell of the slightly compressed ${\mathrm{WSe}}_{2}$ is perfectly commensurate with a $4\ifmmode\times\else\texttimes\fi{}4$ graphene lattice with a mismatch below 0.03%, which could explain why the monolayer ${\mathrm{WSe}}_{2}$ is compressed on MLG. From XRD and first-principles calculations, we conclude that the observed size of strain will affect ${\mathrm{\ensuremath{\Delta}}}_{\mathrm{SO}}$ only on the order of a few meV. In addition, angle-resolved, ultraviolet, and x-ray photoelectron spectroscopies shed light on the band alignment between ${\mathrm{WSe}}_{2}$ and MLG/SiC and indicate electron transfer from graphene to the ${\mathrm{WSe}}_{2}$ monolayer. As further revealed by atomic force microscopy, the ${\mathrm{WSe}}_{2}$ island size depends on the number of carbon layers on top of the SiC substrate. This suggests that the epitaxy of ${\mathrm{WSe}}_{2}$ favors the weak van der Waals interactions with graphene, while it is perturbed by the influence of the SiC substrate and its carbon buffer layer.