High-performance non-volatile resistive switching memory based on a polyimide/graphene oxide nanocomposite
Ju‐Young Choi, Jeong-Jun Lee, Jihyun Jeon, Jaehyuk Im, Junhwan Jang, Seung-Won Jin, Hyeyoung Joung, Hwan‐Chul Yu, Kyeong-Nam Nam, Hyeong-Joo Park, Dong‐Min Kim, Inho Song, Jaesung Yang, Soohaeng Cho, Chan‐Moon Chung
Abstract
Chemical structure of PI-GO, schematic structure of the ITO/PI-GO/Al device and its memory characteristics.
Topics & Concepts
SchematicPolyimideGrapheneNanocompositeMaterials scienceOxideResistive random-access memoryStack (abstract data type)Non-volatile memoryOptoelectronicsNanotechnologyLayer (electronics)VoltageComputer scienceElectronic engineeringElectrical engineeringEngineeringMetallurgyProgramming languageAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsConducting polymers and applications