Rashba effect and point-defect engineering synergistically improve the thermoelectric performance of the entropy-stabilized Sn<sub>0.8</sub>Ge<sub>0.2</sub>Te<sub>0.8</sub>Se<sub>0.2</sub>alloy
Liangwei Fu, Kangpeng Jin, Dan Zhang, Chenghao Zhang, Haonan Nie, Zixiong Zhen, Pan Xiong, Ming Huang, Jiaqing He, Biao Xu
Abstract
The Rashba effect and point defect scattering significantly enhance zT of entropy-stabilized Sn 0.8 Ge 0.2 Te 0.8 Se 0.2 with disorder on cationic and anionic sites.
Topics & Concepts
Thermoelectric effectMaterials scienceEntropy (arrow of time)Condensed matter physicsEngineering physicsCrystallographic defectPhysicsThermodynamicsAdvanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin FilmsAdvanced Semiconductor Detectors and Materials