Litcius/Paper detail

Soft-Error-Aware Read-Decoupled SRAM With Multi-Node Recovery for Aerospace Applications

Soumitra Pal, Sayonee Mohapatra, Wing‐Hung Ki, Aminul Islam

2021IEEE Transactions on Circuits & Systems II Express Briefs36 citationsDOI

Abstract

In advanced technology nodes, SRAM cells, used in the aerospace industry, have become highly susceptible to soft-error. In this brief, a Soft-Error-Aware Read-Decoupled 14T (SAR14T) SRAM cell is proposed for aerospace applications. To assess the performance of the proposed cell, it is compared with other soft-error-aware SRAM cells, like WE-QUATRO, QUCCE12T, RHD12T, RSP14T and RHBD14T. Simulation results show that all the sensitive nodes of SAR14T can reattain their initial states after being impacted by soft-error. Furthermore, the cell is capable of recovering from multi-node upset induced at its internal node-pair. Due to the employment of the read-decoupling technique, SAR14T shows the highest read stability compared to its peers. The proposed cell also proves to be the superior SRAM in terms of write ability and write delay. All these improvements are accomplished at the expense of a slightly longer read delay.

Topics & Concepts

Soft errorStatic random-access memoryAerospaceNode (physics)Decoupling (probability)Computer scienceUpsetError detection and correctionSingle event upsetEmbedded systemComputer hardwareElectronic engineeringEngineeringAlgorithmAerospace engineeringMechanical engineeringControl engineeringStructural engineeringRadiation Effects in ElectronicsLow-power high-performance VLSI designVLSI and Analog Circuit Testing