Depth profiling of surface damage in n-type GaN induced by inductively coupled plasma reactive ion etching using photo-electrochemical techniques
Shinji Yamada, Kentaro Takeda, Masachika Toguchi, Hideki Sakurai, Toshiyuki Nakamura, Jun Suda, Tetsu Kachi, Taketomo Sato
Abstract
Depth profiling of the dry-etching damage in n-type GaN induced by inductively coupled plasma reactive ion etching was carried out by cyclical electrochemical impedance spectroscopy (EIS) measurements and damage-free photo-electrochemical (PEC) etching. The GaN samples were dry-etched under different etching bias power (Pbias) conditions, and PEC etchings were conducted in increments of 10 nm after EIS measurements. The damage depth was determined to be less than 50 nm for the sample corresponding to Pbias = 30 W and was less than 10 nm for the two-step etching sample corresponding to Pbias = 30 W + 5 W.
Topics & Concepts
Inductively coupled plasmaMaterials scienceReactive-ion etchingEtching (microfabrication)Analytical Chemistry (journal)Dry etchingIonPlasmaDielectric spectroscopyElectrochemistryChemistryNanotechnologyElectrodeEnvironmental chemistryQuantum mechanicsPhysicsPhysical chemistryOrganic chemistryLayer (electronics)GaN-based semiconductor devices and materialsMetal and Thin Film MechanicsSemiconductor materials and devices