High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules
Syam Madhusoodhanan, Abbas Sabbar, Huong Tran, Binzhong Dong, Jiangbo Wang, Alan Mantooth, Shui-Qing Yu, Zhong Chen
Abstract
The indium-gallium nitride (InGaN)/gallium nitride (GaN) multiple quantum well (MQW) structure is demonstrated as a possible solution for high-temperature photodiode applications. High-temperature spectral and noise analysis of InGaN/GaN MQW structure is performed for the potential integration as a detector in future power electronics applications. The spectral response was measured under photovoltaic and bias modes for the temperature range of 77-800 K. A peak spectral responsivity of 27.0 mA/W at 440 nm at 500 K is recorded. The peak external quantum efficiency of the device was calculated to be in the range of 5-8% in the temperature range 77-800 K. The photodetector sensitivity of the structure is quantified using the material figure of merit parameter, D <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> for different temperature and biased voltages. A peak detectivity of 4 ×108 cm Hz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup> /2W <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> is observed at 800 K with zero bias at 440 nm.