Large Zeeman splitting induced anomalous Hall effect in ZrTe5
Zeliang Sun, Zhipeng Cao, Jianhua Cui, Changsheng Zhu, Donghui Ma, Honghui Wang, Weizhuang Zhuo, Zhaohui Cheng, Zhenyu Wang, Xiangang Wan, Xianhui Chen
Abstract
Abstract Berry phase effects have significant influences on the electronic properties of condensed matter. In particular, the anomalous Hall conductivity has been recognized as an intrinsic property of the systems with non-zero Berry curvature. Here, we present the anomalous Hall effect observed in the non-magnetic material ZrTe 5 , which hosts a large Zeeman splitting with Landé g -factor of 26.49. The quantum oscillation analysis reveals non-linear band dispersion near the top of valence band in bulk band structure, and no Weyl node forms with applied magnetic field. The anomalous Hall conductivity reaches 129 Ω −1 cm −1 at 2 K, and shows weak temperature dependence. All these combined with theoretical analysis suggest that the anomalous Hall effect observed in ZrTe 5 originates from the non-vanishing Berry curvature induced by combining large Zeeman splitting and strong spin–orbit coupling. Remarkably, the anomalous Hall resistivity reverses its sign from negative to positive at a hydrostatic pressure P = 1.3 GPa, which confirms that the anomalous Hall effect in ZrTe 5 is highly related to the band structure-dependent Berry curvature. Our results have verified the anomalous Hall mechanism in ZrTe 5 and offer a new platform to study the anomalous Hall effect.