Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs
Zane Jamal-Eddine, Brendan Gunning, Andrew A. Armstrong, Siddharth Rajan
Abstract
Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. This work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.
Topics & Concepts
Light-emitting diodeScalingOptoelectronicsVoltageNitrideQuantumMaterials sciencePhysicsNanotechnologyMathematicsQuantum mechanicsLayer (electronics)GeometryGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesNanowire Synthesis and Applications