Polarization-Modulated Solar-Blind Optoelectronic Synapse Based on Anisotropic β<i>-</i>Ga<sub>2</sub>O<sub>3</sub> Crystal for Logic Operations and Motion Perception
Zhenyang Wang, Chao Wu, Fengmin Wu, Daoyou Guo, Shunli Wang
Abstract
Photoelectronic synapses exhibit remarkable potential in neuromorphic systems due to their unique multimodal sensing and brain-like information processing capabilities. However, their complex device architectures and limited functionalities remain critical bottlenecks. In this study, we innovatively developed a polarization-sensitive optoelectronic synaptic device based on β-Ga 2 O 3 single crystals. Through systematic characterization, we revealed the synergistic advantages of the (100)-oriented β-Ga 2 O 3 crystal in terms of persistent photoconductivity (PPC) effects and anisotropy. The developed solar-blind polarization-sensitive synaptic device demonstrated polarization-dependent postsynaptic current (EPSC), short-term memory (STM), and advanced learning–forgetting–relearning behavior. Notably, we achieved in situ switching between the OR/AND and NOR/NAND logic gates through polarization modulation. For neuromorphic computing applications, the device exhibited superior synaptic weight modulation capabilities, enabling the control of conductance states via a photoenhancement/electrosuppression mechanism and achieving a 77.6% classification accuracy on a Fashion MNIST data set. Notably, we realized a multimodal signal fusion function, achieving a 98.2% real-time recognition accuracy for missile motion perception. This work fundamentally advances the development and application of neuromorphic optoelectronics by realizing synaptic functions through polarization control.