Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO<sub>4</sub>(0001) substrate
Martin Velazquez‐Rizo, Mohammed A. Najmi, Daisuke Iida, Pavel Kirilenko, Kazuhiro Ohkawa
Abstract
Abstract We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on a ScAlMgO 4 (0001) (SAM) substrate without a low-temperature buffer layer. The InGaN layer was tensile-strained, and its stoichiometry corresponded to In 0.13 Ga 0.87 N. We also present the microstructural observation of the InGaN/SAM interface via integrated differential phase contrast-scanning transmission electron microscopy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O–Sc SAM surface and the (Ga,In) atoms of InGaN.
Topics & Concepts
Materials scienceEpitaxyLayer (electronics)Transmission electron microscopyPolarStoichiometrySubstrate (aquarium)Metalorganic vapour phase epitaxyScanning transmission electron microscopyPhase (matter)OptoelectronicsCrystallographyNanotechnologyChemistryPhysicsOrganic chemistryOceanographyAstronomyGeologyGaN-based semiconductor devices and materialsMetal and Thin Film MechanicsAcoustic Wave Resonator Technologies