Breaking the limits of HEMT performance: InGaN channel and back barrier engineering
Wagma Hidayat, Muhammad Usman
Topics & Concepts
High-electron-mobility transistorOptoelectronicsMaterials scienceChannel (broadcasting)Gallium nitrideComputer scienceTransistorTelecommunicationsNanotechnologyPhysicsLayer (electronics)Quantum mechanicsVoltageGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesRadio Frequency Integrated Circuit Design