Modulating the electro-optical properties of doped C<sub>3</sub>N monolayers and graphene bilayers <i>via</i> mechanical strain and pressure
A. Bafekry, Chuong V. Nguyen, Mohammed M. Obeid, Mitra Ghergherehchi
Abstract
The effect of atomic doping on the electronic properties of C<sub>3</sub>N monolayer and graphene bilayer is investigated. We found that doped C<sub>3</sub>N monolayer and doped graphene bilayer are a direct semiconductor. Our result show that the electronic properties of the studied structures can be modulated by electric field and mechanical strain.
Topics & Concepts
MonolayerChemistryDopingBilayer grapheneGrapheneBilayerStrain (injury)SemiconductorElectric fieldCondensed matter physicsNanotechnologyOptoelectronicsMembraneMaterials sciencePhysicsQuantum mechanicsBiochemistryInternal medicineMedicineGraphene research and applications2D Materials and ApplicationsBoron and Carbon Nanomaterials Research