Layer-dependent Schottky contact at van der Waals interfaces: V-doped WSe2 on graphene
Samuel Stolz, Azimkhan Kozhakhmetov, Chengye Dong, Oliver Gröning, Joshua A. Robinson, Bruno Schuler
Abstract
Abstract Contacting two-dimensional (2D) semiconductors with van der Waals semimetals significantly reduces the contact resistance and Fermi level pinning due to defect-free interfaces. However, depending on the band alignment, a Schottky barrier remains. Here we study the evolution of the valence and conduction band edges in pristine and heavily vanadium (0.44%), i.e., p -type, doped epitaxial WSe 2 on quasi-freestanding graphene (QFEG) on silicon carbide as a function of thickness. We find that with increasing number of layers the Fermi level of the doped WSe 2 gets pinned at the highest dopant level for three or more monolayers. This implies a charge depletion region of about 1.6 nm. Consequently, V dopants in the first and second WSe 2 layer on QFEG/SiC are ionized (negatively charged) whereas they are charge neutral beyond the second layer.