Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform
Jinjin Tang, Zuoheng Jiang, Chengcai Wang, Junting Chen, Haohao Chen, Yihan Zhang, Zheyang Zheng, Xinyu Wang, Jun Ma, Junlei Zhao, Jianxun Liu, Qian Sun, Mengyuan Hua
Abstract
a bipolar p-FET (BiPFET) structure is proposed to enhance the conduction capability of GaN-based p-channel transistors that is limited by the intrinsically low hole mobility. In the BiPFET, a n-/p-/n-GaN (NPN) bipolar stack is depolyed at the drain side of a conventional p-FET, amplifying the conduction current with electrons serving as the majority carriers, which possess much higher mobility than holes. By matching the NPN stack with p-FET, the drain current density increases by 17 times compared to the conventional p-FET, exceeding 100 mA/mm. Meanwhile, the device control logic, high I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> /I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> ratio and low gate leakage current of the p-FET are also well preserved.