Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy
Thomas Kaltsounis, Helge Haas, Matthieu Lafossas, S. Torrengo, Vishwajeet Maurya, Julien Buckley, D. Mariolle, M. Veillerot, Alain Gueugnot, Laurent Mendizabal, Y. Cordier, Matthew Charles
Topics & Concepts
Spreading resistance profilingEpitaxyDopingMetalorganic vapour phase epitaxyMaterials scienceWaferOptoelectronicsSecondary ion mass spectrometryGallium nitrideSiliconGalliumMicroscopyScanning electron microscopeAnalytical Chemistry (journal)NanotechnologyIonOpticsChemistryComposite materialLayer (electronics)MetallurgyPhysicsOrganic chemistryChromatographyGaN-based semiconductor devices and materialsSemiconductor materials and devicesNanowire Synthesis and Applications