Growth and characterization of low-temperature Si<sub>1-x</sub>Sn<sub>x</sub> on Si using plasma enhanced chemical vapor deposition
Seyedeh Fahimeh Banihashemian, Joshua M. Grant, Abbas Sabbar, Huong Tran, Oluwatobi Olorunsola, Solomon Ojo, Sylvester Amoah, Mehrshad Mehboudi, Shui-Qing Yu, Aboozar Mosleh, Hameed A. Naseem
Abstract
Silicon-tin (Si 1-x Sn x ) films have been grown using plasma-enhanced chemical vapor deposition on Si (001) substrate. X-ray photoelectron spectroscopy characterization of the thin films show successful substitutional incorporation of Sn in Si lattice up to 3.2%. The X-ray diffraction characterizations show epitaxial growth of Si 1-x Sn x films (001) direction. The Sn incorporation has been measured using X-ray photoelectron spectrometry and the film uniformity was confirmed using energy dispersive X-ray spectrometry.
Topics & Concepts
X-ray photoelectron spectroscopyChemical vapor depositionMaterials scienceAnalytical Chemistry (journal)TinSiliconThin filmEpitaxySubstrate (aquarium)X-ray crystallographyPlasma-enhanced chemical vapor depositionX-ray spectroscopyDiffractionSpectroscopyNanotechnologyChemical engineeringOptoelectronicsOpticsChemistryMetallurgyLayer (electronics)Quantum mechanicsOceanographyGeologyPhysicsEngineeringChromatographyPhotonic and Optical DevicesSemiconductor materials and devicesOptical Coatings and Gratings