Light‐Regulated Anti‐Ambipolar Transport with Multi‐Logic States in Metal‐WSe<sub>2</sub>‐Metal Transistor
Hanyu Wang, Wei Gao, Peiting Wen, He Yu, Ying Huang, Qian Yue, Xiaozhou Wang, Nengjie Huo
Abstract
Abstract With the advent of big data, multi‐valued logic computing becomes an indispensable technology in the field of new micro‐electronic devices. As a new concept attracting more attention in recent years, anti‐ambipolar behavior shows its application potential in digital electronic and logic circuits. Here, the anti‐ambipolar transistors (AATs) based on metal–WSe 2 –metal configuration with dual contact barriers is fabricated. Under light illumination, the photocurrent as function of gate voltage exhibits anti‐ambipolar behavior with a distinct peak which can be varied with incident light power. The appearance of anti‐ambipolar transport is attributed to both contact barrier and photo‐excited carriers. The variation of the Fermi level in WSe 2 regulated by gate voltage plays a key role in altering the dominant transport mechanism of the carrier type. This work proposes a new device concept that the photocarrier and barrier can induce an anti‐ambipolar characteristic, guiding the new direction for the multi‐valued logic/digital electronic applications.