A defect-induced broadband photodetector based on WS<sub>2</sub>/pyramid Si 2D/3D mixed-dimensional heterojunction with a light confinement effect
Di Wu, Chenguang Guo, Zhao‐Yang Wang, Xiaoyan Ren, Yongzhi Tian, Zhifeng Shi, Pei Lin, Yongtao Tian, Yongsheng Chen, Xinjian Li
Abstract
A WS 2 /pyramid Si 2D/3D mixed-dimensional vdW heterojunction device shows a broadband response spectrum up to 3.0 μm with high performance due to the strong light confinement effect of the pyramid Si and defect-induced narrowed bandgap of the WS 2 film.
Topics & Concepts
HeterojunctionMaterials sciencePhotodetectorPyramid (geometry)OptoelectronicsBroadbandBand gapOpticsPhysics2D Materials and ApplicationsNanowire Synthesis and ApplicationsGa2O3 and related materials