Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors
Samaneh Sharbati, Iman Gharibshahian, Thomas Ebel, Ali A. Orouji, Toke Franke
Abstract
Abstract A physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) and thereby the on-state resistance and breakdown voltage can be controlled by varying the barrier layer thickness and Al mole fraction in non-recessed depletion-mode GaN HEMTs. The analytical model indicates that the 2DEG charge density in the channel increases from 2.4 × 10 12 cm −2 to 1.8 × 10 13 cm −2 when increasing the Al mole fraction from x = 0.1 to 0.4 for an experimental non-recessed-gate GaN HEMT. In the recessed-gate GaN HEMT, in addition to these parameters, the recess height can also control the 2DEG to achieve high-performance power electronic devices. The model also calculates the critical recess height for which a normally-ON GaN switch becomes normally-OFF. This model shows good agreement with reported experimental results and promises to become a useful tool for advanced design of GaN HEMTS.