Polarized Electroluminescence Emission in High‐Performance Quantum Rod Light‐Emitting Diodes via the Langmuir‐Blodgett Technique
Seunghyun Rhee, Dongju Jung, Dahin Kim, Doh C. Lee, Changhee Lee, Jeongkyun Roh
Abstract
Abstract Due to their anisotropic structure, quantum rods (QRs) feature unique properties that differ from quantum dots, such as suppression of non‐radiative Auger recombination and linearly polarized light emission. Despite many potential advantages, the progress of QR‐based light‐emitting diodes (QR‐LEDs) is left behind due to the difficulty in aligning QRs. In this study, polarized electroluminescence emission is reported in high‐performance QR‐LEDs by employing the Langmuir‐Blodgett (LB) technique. The adoption of the LB technique successfully produces a highly dense and smooth QR film with a high degree of alignment. As a result, the aligned QR films exhibit polarized photoluminescence emission with a degree of linear polarization of 2.1. Advantageous features of the LB technique, such as nondestructiveness, precise thickness control, and the nonnecessity of an additional matrix material, allow to fabricate QR‐LEDs with the same procedure as the standard spin coating‐based scheme. The device is fabricated via the LB technique, which shows excellent device performance, such as the low turn‐on voltage of 1.8 V, peak luminance of 56 287 cd m −2 , and peak external quantum efficiency (EQE) of 10.33%. Furthermore, these devices clearly exhibit an indication of polarized electroluminescence emission, which opens new opportunities for QRs in display technologies.