Tb<sup>3+</sup>-Doped CsPbCl<sub>2</sub>Br<sub>1</sub> Nanocrystal Glasses for High-Performance Silicon Photodetectors
Hangtao Ye, Qin Wang, Ziyao He, Yao Tong, Wei Xia, Hongbin Fan, Weidong Xiang, Xiaojuan Liang
Abstract
In recent years, silicon (Si) photodetectors (PDs) have been widely used in daily life, but the ultraviolet (UV) region response is extremely low, while perovskite nanocrystals (NCs) can be used as a light conversion layer to effectively improve the UV region detection performance due to their high absorption coefficient. At the same time, embedding NCs into a glass matrix can protect NCs from the adverse external environment, which can greatly prolong the effective working time of the detector. In this work, a series of perovskite NC glasses (PNGs) with intrinsic emission but still maintaining high transmittance were fabricated successfully by regulating the concentration of CsPbCl2Br1 NCs. Furthermore, the rare-earth ion Tb3+ was successfully introduced into CsPbCl2Br1 NCs, achieving energy transfer of the exciton to Tb3+, and the photoluminescence quantum yield (PLQY) had a big boost from 11.1 to 28.1%. In the end, the prepared CsPbCl2Br1:Tb3+ PNG was first integrated with Si PDs, and the UV responsibility of Si PDs was enhanced due to the absorption of CsPbCl2Br1 PNG doped with Tb3+ in the UV region. At 320 nm, the responsivity of Tb3+-doped CsPbCl2Br1 PG-Si PDs is significantly higher than that of bare Si PDs. In addition, CsPbCl2Br1:Tb3+ PNG-Si PDs maintained excellent photocurrent stability. The CsPbCl2Br1:Tb3+ PNGs are expected to be one of the optimum semiconductor materials for next-generation high-performance UV PDs.