LiF by atomic layer deposition—Made easy
Julie Nitsche Kvalvik, Kristian B. Kvamme, Kjetil Almaas, Amund Ruud, Henrik H. Sønsteby, Ola Nilsen
Abstract
Lithium fluoride (LiF) is an integral part of UV optics. Recently, it has also gained attention for its role in the solid-electrolyte interphase on the anode of lithium-ion batteries. Atomic layer deposition (ALD) is the preferred tool for synthesizing conformal and pin-hole free LiF thin films, especially on high aspect ratio structures. Present routes to deposit LiF by ALD are based on HF or HF-pyridine as the fluorine source, requiring strict safety precautions. Other routes involve TiF4 or WF6, resulting in inclusions of Ti or W impurities in the resulting films. Herein, we present a new route to deposit LiF by ALD, using lithium tert-butoxide (LiOtBu) and NH4F as precursors. The process yields uniform films over a broad temperature range (150–300 °C), with a growth per cycle of 50.9 pm/cycle (225 °C). The films are free from any nitrogen contamination from the NH4F precursor. This process provides a facile route for high purity LiF thin films with the use of less harmful precursor chemistry.