First principles analysis of impurities in silicon carbide grain boundaries
Cassidy Atkinson, Matthew Guziewski, Shawn P. Coleman, Sanjeev K. Nayak, S. P. Alpay
Topics & Concepts
Materials scienceSilicon carbideDopantGrain boundaryImpurityCrystallographic defectSiliconDopingCeramicChemical physicsCarbideCarbon fibersEngineering physicsNanotechnologyMetallurgyCondensed matter physicsOptoelectronicsMicrostructureComposite materialPhysicsEngineeringComposite numberOrganic chemistryChemistrySilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAdvanced ceramic materials synthesis