The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation
Jeong‐Hwan Park, Xu Yang, Jun Yeob Lee, Mun‐Do Park, Si‐Young Bae, Markus Pristovsek, Hiroshi Amano, Dong‐Seon Lee
Abstract
could be successfully exfoliated, which indicates that 2-D h-BN survived after AlN growth and underlines its availability for the vdWE/RE of III-nitrides with further mechanical transfer. By enhancing the stability of the 2-D material on the substrate, our study provides insights into the realization of a novel epitaxy concept.
Topics & Concepts
Boron nitrideExfoliation jointEpitaxyGrapheneMaterials scienceNitrideHexagonal boron nitrideStability (learning theory)van der Waals forceNanotechnologyOptoelectronicsChemistryComputer scienceOrganic chemistryMoleculeLayer (electronics)Machine learningGraphene research and applicationsSemiconductor materials and devicesGaN-based semiconductor devices and materials