The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage
Mehmet Okan Erdal, Adem Koçyiğit, Murat Yıldırım
Topics & Concepts
CapacitorCapacitanceEquivalent series resistanceMaterials sciencePassivationAnalytical Chemistry (journal)DopingDepletion regionConductanceSemiconductorVoltageOptoelectronicsElectrodeElectrical engineeringCondensed matter physicsChemistryLayer (electronics)Composite materialEngineeringPhysical chemistryChromatographyPhysicsSemiconductor materials and interfacesSemiconductor materials and devicesSilicon Nanostructures and Photoluminescence