Resistive Switching Behavior in Lead-Free Double Perovskite Cs<sub>2</sub>AgSbBr<sub>6</sub>for Flexible Device Application
Yuchan Wang, Nannan Xu, Wenxia Zhang, Yiming Yuan, Fi Qi, Nan Zhang, Xiaosheng Tang
Abstract
Herein, the lead-free double perovskite Cs2AgSbBr6 (CASB) films are prepared by solution spin- coating method. The Ag/polymethyl methacrylate (PMMA)/CASB/indium tin oxide (ITO) sandwich-like resistive random access memory (ReRAM) is fabricated, which exhibits bipolar resistive switching (RS) behaviors with stable endurance of over 230 cycles, an excellent retention of 104 s, and a large ON/OFF ratio (>200). More importantly, the flexible application of the memory devices presents uniform electrical properties under different bending lengths and 103 consecutive mechanical bending cycles. In addition, the retention ability can maintain more than 104 s after consecutive mechanical bending. The RS mechanism involving the first-principles analysis of the chemical bond lengths and integrated crystal orbital Hamilton population (ICOHP) values is proposed to illustrate the RS behaviors. This study will contribute to demonstrate the huge potential of the lead-free double perovskite CASB for use in the next generation high-performance nonvolatile flexible memory devices.