Semiconductor Materials
Unknown authors
Abstract
GaAs1-xPx from a commercial source and from an in-house materials development project has been thoroughly evaluated for use in injection electroluminescence display. The work includes measurement of optical transmission, etch pit density and photoluminescence in the starting material. Processing techniques for etch polishing, Zn diffusion and diode fabrication were developed and photoluminescence of the resulting p-skins and the spectra, luminous emittance and quantum efficiency in diodes were measured. The overall conclusion is that at present only the -hpamaterial is suitable for the display application. It yields smooth regular Zn diffusion fronts; the diodes have edge emission quantum efficiencies greater than .0001 and luminous emittances of roughly 50 lumens/sq ft at about 10 A/sq cm. (Author)