Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory (Adv. Funct. Mater. 38/2022)
Xiaomin Liu, Shuxia Ren, Zhenhua Li, Jiajun Guo, Shenghui Yi, Zheng Yang, Weizhong Hao, Rui Li, Jinjin Zhao
Abstract
Resistive Random-Access Memory In article number 2202951, Shuxia Ren, Jinjin Zhao, and co-workers develop a flexible transparent photoelectric resistive switching memory based on perovskite quantum dots and graphene oxide hybrid films. The high-efficiency resistive switching behaviors are mainly attributed to the accelerated migration of ions within the hybrid film under illumination. This research finding provides a huge space for development of photoelectrical dual-controlled flexible memory devices.
Topics & Concepts
Materials sciencePerovskite (structure)Resistive random-access memoryPhotoelectric effectOptoelectronicsGrapheneResistive touchscreenOxideQuantum dotNanotechnologyComputer scienceElectrical engineeringVoltageChemical engineeringComputer visionMetallurgyEngineeringAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsAnalytical Chemistry and Sensors