Gatemon Qubit Based on a Thin InAs-Al Hybrid Nanowire
Jierong Huo, Zezhou Xia, Zonglin Li, Shan Zhang, Yuqing Wang, Dong Pan, Qichun Liu, Yulong Liu, Zhichuan Wang, Yichun Gao, Jianhua Zhao, Tiefu Li, Jianghua Ying, Runan Shang, Hao Zhang
Abstract
We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time T 1 ∼ 0.56 μs and the dephasing time <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:msubsup> <mml:mi>T</mml:mi> <mml:mn>2</mml:mn> <mml:mo>*</mml:mo> </mml:msubsup> <mml:mo>∼</mml:mo> <mml:mn>0.38</mml:mn> </mml:mrow> </mml:math> μs. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.