Litcius/Paper detail

Modified PWM Scheme to Reduce Reverse Conduction Loss in GaN-Based Independently Controlled Multiple Output Flyback Converter

Arnab Sarkar, Nachiketa Deshmukh, Sandeep Anand

2022IEEE Transactions on Power Electronics19 citationsDOI

Abstract

The recently proposed independently controlled multiple output flyback converter (ICMOFC) scheme improves cross-regulation by utilizing gallium nitride (GaN) switches with negative gate turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> voltage. The highly inefficient reverse conduction (RC) of negative gate biased GaN devices leads to significant RC loss in the existing ICMOFC scheme. To mitigate this problem, this letter proposes a new pulsewidth modulation (PWM) scheme. The RC loss reduction is achieved by reducing the RC duration and RC current. The effectiveness of the proposed PWM strategy is analytically and experimentally verified using a 40-W dual output flyback converter. The results demonstrate a peak efficiency improvement of 1.26% over the existing ICMOFC scheme. Furthermore, the scheme also achieves high power density (51 W/in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{3}$</tex-math></inline-formula> ) and excellent cross-regulation (0.2%).

Topics & Concepts

Flyback transformerPulse-width modulationGallium nitrideTopology (electrical circuits)Flyback converterModulation (music)MathematicsConvertersControl theory (sociology)VoltageElectronic engineeringComputer scienceElectrical engineeringEngineeringPhysicsMaterials scienceBoost converterControl (management)NanotechnologyTransformerArtificial intelligenceAcousticsLayer (electronics)GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices