Comprehensive Physics Based TCAD Model for 2D MX<sub>2</sub> Channel Transistors
D. Mahaveer Sathaiya, Terry Y.T. Hung, Edward Chen, Wen-Chia Wu, Aslan Wei, Chih‐Piao Chuu, Sheng‐Kai Su, Ang Sheng Chou, Cheng-Ting Chung, Chao-Hsin Chien, Han Wang, Jin Cai, Chung-Cheng Wu, Iuliana Radu, Jeff Wu
Abstract
For the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> ), channel mobility (μ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CH</inf> ), Schottky barrier height (SBH), & D <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</inf> from experimental data on back-gate (BG) transistors with MX <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> and μ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CH</inf> extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH ~ 0eV, high doping density >2e13cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> ) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.