Fabrication of MoS<sub>2</sub>/ZnO Hybrid Nanostructures for Enhancing Photodetection
Anshika Srivastava, Richa Singh, Satyabrata Jit, Shweta Tripathi
Abstract
In this article, the effect of MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and ZnO blend ratio on the performance of MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> :ZnO hybrid photodiodes is investigated. The UV and visible performance parameters for five different devices consisting of semiconducting layers like MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , ZnO, MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> :ZnO (1:1), MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> :ZnO (1:2), and MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> :ZnO (2:1) each are analyzed. The device MoS2:ZnO (1:2) shows the best performance in the UV region with a responsivity of 17.04 A/W, detectivity of 6.84 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> Jones and external quantum efficiency (EQE) of 6604% at 320nm, -1 V bias. On the other hand, the device MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> :ZnO (2:1) gives the best performance in the visible region with a responsivity of 2.27 A/W, detectivity of 0.60 × 1013 Jones, and EQE of 533% at 529nm, -1 V.