Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature
Honglong Ning, Xuan Zeng, Hongke Zhang, Xu Zhang, Rihui Yao, Xianzhe Liu, Dongxiang Luo, Zhuohui Xu, Qiannan Ye, Junbiao Peng
Abstract
Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 × 106, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.
Topics & Concepts
Thin-film transistorMaterials scienceOptoelectronicsTransistorTransparency (behavior)SwingSubthreshold swingBendingStress (linguistics)Flexible displayNanotechnologyThreshold voltageElectrical engineeringComposite materialComputer scienceLayer (electronics)VoltageEngineeringMechanical engineeringLinguisticsPhilosophyComputer securityThin-Film Transistor TechnologiesZnO doping and propertiesAdvanced Sensor and Energy Harvesting Materials